Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

نویسندگان

چکیده

Patterning below 10 nm with conventional techniques such as Litho-etch (LE*), a subtractive self-aligned multiple patterning process, suffers from limitations due to edge placement errors, decreasing throughput, complexity, pattern collapse, photoresist non-uniformity. Bottom-up processes for fabrication of nano devices by means Area selective deposition (ASD) are peaking up over top-down approaches mitigate most the above-mentioned problems. One ways achieve ASD an hardmask is using extreme ultra-violet (EUV, λ-13.5 nm) lithography single-step self-assembled monolayers (SAM) on photosensitive substrate (or layer) followed atomic layer (ALD). In this work, photo-catalytically active titanium oxide considered organosilane SAMs different chain length. Upon exposure EUV, fragmentation SAM’s molecules observed though mechanism involving electron/hole pair exchange TiO2. This induces changes in chemistry exposed area, allowing ALD SAM-cleared areas.

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ژورنال

عنوان ژورنال: Applied Surface Science

سال: 2022

ISSN: ['1873-5584', '0169-4332']

DOI: https://doi.org/10.1016/j.apsusc.2022.154657